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Part Datasheet Search > Transistors > IXYS Semiconductor > IXFH21N50F Datasheet PDF
IXFH21N50F
$ 2.11
IXFH21N50F Datasheet PDF (8 Pages)
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IXFH21N50F Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
300 W
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
21.0 A
Rise Time
12.0 ns
Input Capacitance (Ciss)
2600pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
300W (Tc)

IXFH21N50F Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH21N50F Documents

IXYS Semiconductor
8 Pages / 0.17 MByte
IXYS Semiconductor
8 Pages / 0.17 MByte

IXFH21N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 21A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 500V 21A
IXYS Semiconductor
RF FET Transistor, 500V, 21A, 300W, 500kHz, TO-247AD
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