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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXZ2210N50L Datasheet PDF
IXZ2210N50L
$ 36.29
IXZ2210N50L Datasheet PDF (9 Pages)
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IXZ2210N50L Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Polarity
N-Channel
Power Dissipation
360 W
Drain to Source Voltage (Vds)
500 V
Rise Time
16.0 ns
Input Capacitance (Ciss)
622pF @400V(Vds)
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
10000 mW

IXZ2210N50L Documents

IXYS Semiconductor
9 Pages / 0.3 MByte

IXZ2210N50 Documents

IXYS Semiconductor
Trans RF MOSFET N-CH 500V 10A 8Pin
IXYS Semiconductor
N channel enhancement mode linear RF power MOSFET
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