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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT30N60L2 Datasheet PDF
IXTT30N60L2
$ 16.262
IXTT30N60L2 Datasheet PDF (5 Pages)
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IXTT30N60L2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.24 Ω
Polarity
N-Channel
Power Dissipation
540 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
30A
Rise Time
65 ns
Input Capacitance (Ciss)
10700pF @25V(Vds)
Input Power (Max)
540 W
Fall Time
43 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
540W (Tc)

IXTT30N60L2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT30N60L2 Documents

IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte

IXTT30N60 Documents

IXYS Semiconductor
TO-268 N-CH 600V 30A
IXYS Semiconductor
Trans MOSFET N-CH 600V 30A 3Pin(2+Tab) TO-268
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