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IXFX120N65X2 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

PLUS N-CH 650V 120A

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IXFX120N65X2 Datasheet PDF (5 Pages)

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IXFX120N65X2 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

24 mΩ

Polarity

N-CH

Power Dissipation

1.25 kW

Threshold Voltage

2.7 V

Drain to Source Voltage (Vds)

650 V

Breakdown Voltage (Drain to Source)

650 V

Continuous Drain Current (Ids)

120A

Rise Time

23 ns

Input Capacitance (Ciss)

15500pF @25V(Vds)

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

1250W (Tc)

IXFX120N65X2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXFX120N65X2 Environmental

IXFX120N65X2 Function Overview

IXFX120N65X2 Documents

IXFX120N65X2 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.19 MByte

IXFX120N65 Documents

IXFX120N65X2 Datasheet PDF

IXYS Semiconductor

PLUS N-CH 650V 120A

IXFX120N65X2 Datasheet PDF

Littelfuse

Power Field-Effect Transistor,

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