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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN110N20L2 Datasheet PDF
IXTN110N20L2
$ 14.207
IXTN110N20L2 Datasheet PDF (5 Pages)
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IXTN110N20L2 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Case/Package
SOT-227-4
Polarity
N-CH
Power Dissipation
735W (Tc)
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
100A
Input Capacitance (Ciss)
23000pF @25V(Vds)
Power Dissipation (Max)
735W (Tc)

IXTN110N20L2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTN110N20L2 Documents

IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.16 MByte

IXTN110N20 Documents

IXYS Semiconductor
SOT-227B N-CH 200V 100A
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