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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH20N60BD1 Datasheet PDF
IXGH20N60BD1
$ 7.4

IXGH20N60BD1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
150 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
150 W
Power Dissipation (Max)
150 W

IXGH20N60BD1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH20N60BD1 Documents

IXYS Semiconductor
2 Pages / 0.05 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGH20N60 Documents

IXYS Semiconductor
IGBT 600V 40A 150W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 40A 150W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 40A 150W TO247AD
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