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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH25N100A Datasheet PDF
IXGH25N100A
$ 10.889
IXGH25N100A Datasheet PDF (4 Pages)
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IXGH25N100A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.00 kV
Current Rating
50.0 A
Case/Package
TO-247-3
Power Dissipation
200000 mW
Rise Time
200 ns
Breakdown Voltage (Collector to Emitter)
1000 V
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

IXGH25N100A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH25N100A Documents

IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
7 Pages / 0.23 MByte

IXGH25N100 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1kV 50A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1000V 50A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1000V 50A 200000mW 3Pin
IXYS Semiconductor
IGBT 1000V 50A 200W TO247AD
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