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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGX60N60C2D1 Datasheet PDF
IXGX60N60C2D1
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IXGX60N60C2D1 Datasheet PDF (6 Pages)
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IXGX60N60C2D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
35 ns
Input Power (Max)
480 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IXGX60N60C2D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGX60N60C2D1 Documents

IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.15 MByte

IXGX60N60C2 Documents

IXYS Semiconductor
IGBT Transistors 60A 600V 2.5V Rds
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