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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH32N60B Datasheet PDF
IXGH32N60B
$ 0.646
IXGH32N60B Datasheet PDF (5 Pages)
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IXGH32N60B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
60.0 A
Case/Package
TO-247-3
Power Rating
200 W
Power Dissipation
200000 mW
Rise Time
20.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

IXGH32N60B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH32N60B Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGH32N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 60A 200W TO247AD
IXYS Semiconductor
IGBT 600V 60A 200W TO247AD
IXYS Semiconductor
HiPerFAST IGBT with Diode Combi Pack
IXYS Semiconductor
HiPerFAST IGBT
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