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IXER35N120D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

ISOPLUS-247

Description:

IGBT 1200V 50A 200W TO247

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IXER35N120D1 Datasheet PDF (4 Pages)

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IXER35N120D1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Voltage Rating (DC)

1.20 kV

Current Rating

50.0 A

Case/Package

ISOPLUS-247

Polarity

NPN

Power Dissipation

200 W

Rise Time

50.0 ns

Breakdown Voltage (Collector to Emitter)

1200 V

Reverse recovery time

80 ns

Input Power (Max)

200 W

IXER35N120D1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Bulk

Operating Temperature

-55℃ ~ 150℃ (TJ)

IXER35N120D1 Environmental

IXER35N120D1 Function Overview

IXER35N120D1 Documents

IXER35N120D1 Other Datasheet PDF

IXYS Semiconductor

4 Pages / 0.07 MByte

IXER35N120 Documents

IXER35N120D1 Datasheet PDF

IXYS Semiconductor

IGBT 1200V 50A 200W TO247

IXER 35N120D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) ISOPLUS 247

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