$ 69.776

IXGH35N120B Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD

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Documentation:

IXGH35N120B Datasheet (2 Pages)

IXGH35N120B Datasheet PDF (2 Pages)

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IXGH35N120B Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

300000 mW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Power (Max)

300 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

300000 mW

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IXGH35N120B Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Size-Length

16.26 mm

Size-Width

5.3 mm

Size-Height

21.46 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXGH35N120B Environmental

IXGH35N120B Function Overview

IXGH35N120B Documents

IXGH35N120B Datasheet

IXYS Semiconductor

2 Pages / 0.05 MByte

IXGH35N120B Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.14 MByte

IXGH35N120 Documents

IXGH35N120B Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD

IXGH35N120C Datasheet PDF

IXYS Semiconductor

IGBT 1200V 70A 300W TO247AD

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