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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGT32N170A Datasheet PDF
IXGT32N170A
$ 23.251
IXGT32N170A Datasheet PDF (5 Pages)
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IXGT32N170A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Power Dissipation
350000 mW
Breakdown Voltage (Collector to Emitter)
1700 V
Input Power (Max)
350 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350000 mW

IXGT32N170A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGT32N170A Documents

IXYS Semiconductor
5 Pages / 0.55 MByte

IXGT32N170 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 75A 350000mW 3Pin(2+Tab) TO-268
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 32A 350000mW 3Pin(2+Tab) TO-268
IXYS Semiconductor
Igbt 1700V 75A 350W To268
IXYS Semiconductor
IGBT 1700V 75A 350W TO268
IXYS Semiconductor
IGBT 1700V 75A 350W TO268
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