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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGT32N60C Datasheet PDF
IXGT32N60C
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IXGT32N60C Datasheet PDF (4 Pages)
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IXGT32N60C Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
200 W

IXGT32N60C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGT32N60C Documents

IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte

IXGT32N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-268
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-268
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