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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGT32N90B2 Datasheet PDF
IXGT32N90B2
$ 5.481
IXGT32N90B2 Datasheet PDF (8 Pages)
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IXGT32N90B2 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Power Dissipation
300000 mW
Breakdown Voltage (Collector to Emitter)
900 V
Input Power (Max)
300 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

IXGT32N90B2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
16.05 mm
Size-Width
14 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGT32N90B2 Documents

IXYS Semiconductor
8 Pages / 0.19 MByte
IXYS Semiconductor
7 Pages / 0.19 MByte

IXGT32N90 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 900V 64A 300000mW 3Pin(2+Tab) TO-268
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 64A 300000mW 3Pin(2+Tab) TO-268
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