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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXSX35N120BD1 Datasheet PDF
IXSX35N120BD1
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IXSX35N120BD1 Datasheet PDF (2 Pages)
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IXSX35N120BD1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
40 ns
Input Power (Max)
300 W

IXSX35N120BD1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXSX35N120BD1 Documents

IXYS Semiconductor
2 Pages / 0.11 MByte
IXYS Semiconductor
3 Pages / 0.27 MByte

IXSX35N120 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1.2kV 70A 3Pin(3+Tab) PLUS 247
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