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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH12N100 Datasheet PDF
IXTH12N100
$ 14.445
IXTH12N100 Datasheet PDF (4 Pages)
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IXTH12N100 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Polarity
N-CH
Power Dissipation
300 W
Drain to Source Voltage (Vds)
1000 V
Continuous Drain Current (Ids)
12A
Rise Time
33 ns
Input Capacitance (Ciss)
4000pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXTH12N100 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTH12N100 Documents

IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

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