IXTH13N110 Datasheet PDF - IXYS Semiconductor

●Compared to traditional transistors, IXTH13N110 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 360000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.