$ 38.914

IXFN110N60P3 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 600V 90A

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Documentation:

IXFN110N60P3 Datasheet (6 Pages)

IXFN110N60P3 Specifications

TYPE

DESCRIPTION

Mounting Style

Panel

Number of Pins

4 Pin

Case/Package

SOT-227-4

Number of Channels

1 Channel

Polarity

N-CH

Power Dissipation

1500 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

90A

Rise Time

19 ns

Input Capacitance (Ciss)

18000pF @25V(Vds)

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1500W (Tc)

View Datasheet >

IXFN110N60P3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

38.23 mm

Size-Width

25.07 mm

Size-Height

9.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

IXFN110N60P3 Environmental

IXFN110N60P3 Function Overview

IXFN110N60P3 Documents

IXFN110N60P3 Datasheet

IXYS Semiconductor

6 Pages / 0.11 MByte

IXFN110N60P3 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.11 MByte

IXFN110N60 Documents

IXFN110N60P3 Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 600V 90A

IXFN110N60P3 Datasheet PDF

Littelfuse

Power Field-Effect Transistor,

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