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IXTP3N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

High Voltage MOS

Case Package:

TO-220-3

Description:

TO-220 N-CH 1200V 3A

Pictures:

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Product Pictures

Documentation:

IXTP3N120 Datasheet (5 Pages)

IXTP3N120 Datasheet PDF (5 Pages)

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IXTP3N120 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

1.20 kV

Current Rating

3.00 A

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

4.5 Ω

Polarity

N-Channel

Power Dissipation

200 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

1.2 kV

Continuous Drain Current (Ids)

3.00 A

Rise Time

35 ns

Reverse recovery time

700 ns

Input Capacitance (Ciss)

1350pF @25V(Vds)

Input Power (Max)

200 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

200W (Tc)

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IXTP3N120 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTP3N120 Environmental

IXTP3N120 Function Overview

IXTP3N120 Documents

IXTP3N120 Datasheet

IXYS Semiconductor

5 Pages / 0.16 MByte

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