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MJD32CT4G
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MJD32CT4G Datasheet PDF (11 Pages)
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MJD32CT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-3.00 A
Case/Package
TO-252-3
Number of Positions
4 Position
Polarity
PNP
Power Dissipation
1.56 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
3A
hFE Min
10 @3A, 4V
Input Power (Max)
1.56 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1.56 W

MJD32CT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃

MJD32CT4G Documents

ON Semiconductor
11 Pages / 0.13 MByte
ON Semiconductor
10 Pages / 0.09 MByte
ON Semiconductor
10 Pages / 0.09 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MJD32CT4 Documents

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ST Microelectronics
TO-252 PNP 100V 3A
ST Microelectronics
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