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MJD350T4 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-252-3

Description:

Trans GP BJT PNP 300V 0.5A 15000mW 3Pin(2+Tab) DPAK T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MJD350T4 Datasheet (5 Pages)MJD350T4 Application Note (6 Pages)

MJD350T4 Datasheet PDF (5 Pages)

View Datasheet

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MJD350T4 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Voltage Rating (DC)

-300 V

Current Rating

-500 mA

Case/Package

TO-252-3

Number of Positions

3 Position

Polarity

PNP

Power Dissipation

15 W

Breakdown Voltage (Collector to Emitter)

300 V

hFE Min

30 @50mA, 10V

hFE Max

240

Input Power (Max)

15 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

15000 mW

View Datasheet >

MJD350T4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

6.6 mm

Size-Width

6.2 mm

Size-Height

2.4 mm

Operating Temperature

150℃ (TJ)

View Datasheet >

MJD350T4 Environmental

MJD350T4 Export Classifications

MJD350T4 Function Overview

MJD350T4 Documents

MJD350T4 Datasheet

ST Microelectronics

5 Pages / 0.49 MByte

MJD350T4 Other Datasheet PDF

ST Microelectronics

1 Pages / 0.42 MByte

MJD350T4 Application Note

ST Microelectronics

6 Pages / 0.13 MByte

MJD350T4 Other References

ST Microelectronics

1 Pages / 0.14 MByte

MJD350 Documents

MJD350 Datasheet PDF

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MJD350 Datasheet PDF

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MJD350T4G Datasheet PDF

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MJD350T4 Datasheet PDF

ST Microelectronics

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MJD350TF Datasheet PDF

ON Semiconductor

Trans GP BJT PNP 300V 0.5A 3Pin(2+Tab) DPAK T/R

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