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Part Datasheet Search > MOSFETs > ON Semiconductor > NTA7002NT1G Datasheet PDF
NTA7002NT1G
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NTA7002NT1G Datasheet PDF (5 Pages)
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NTA7002NT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
154 mA
Case/Package
SC-75-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
7 Ω
Polarity
N-Channel
Power Dissipation
300 mW
Threshold Voltage
1 V
Input Capacitance
11.5 pF
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±10.0 V
Continuous Drain Current (Ids)
154 mA
Rise Time
15 ns
Input Capacitance (Ciss)
20pF @5V(Vds)
Input Power (Max)
300 mW
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

NTA7002NT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.65 mm
Size-Width
0.9 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTA7002NT1G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.05 MByte
ON Semiconductor
1 Pages / 0.15 MByte

NTA7002NT1 Documents

ON Semiconductor
Trans MOSFET N-CH 30V 0.154A 3Pin SOT-416 T/R
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
ON Semiconductor
SOT-416 N-CH 30V 0.154A
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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