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Part Datasheet Search > VISHAY > SI2305ADS-T1-GE3 Datasheet PDF
SI2305ADS-T1-GE3
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SI2305ADS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.088 Ω
Power Dissipation
960 mW
Threshold Voltage
800 mV
Drain to Source Voltage (Vds)
8 V
Input Capacitance (Ciss)
740pF @4V(Vds)
Input Power (Max)
1.7 W
Operating Temperature (Max)
150 ℃

SI2305ADS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-50℃ ~ 150℃ (TJ)

SI2305ADS-T1-GE3 Documents

VISHAY
7 Pages / 0.11 MByte
VISHAY
7 Pages / 0.13 MByte
VISHAY
2 Pages / 0.09 MByte

SI2305ADST1 Documents

VISHAY
MOSFET P-CH 8V 5.4A SOT23-3
Vishay Siliconix
MOSFET 8V 4.1A 1.7W 40mohms @ 4.5V
Vishay Semiconductor
MOSFET P-CH 8V 5.4A SOT23-3
Vishay Siliconix
MOSFET 8V 4.1A 1.7W 40mohm @ 4.5V
Vishay Semiconductor
MOSFET P-CH 8V 5.4A SOT23-3
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