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SI2305DS-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.044Ω; ID +/-3.5A; TO-236 (SOT-23); PD 1.25W

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Documentation:

SI2305DS-T1-E3 Datasheet (2 Pages)

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SI2305DS-T1-E3 Datasheet PDF (2 Pages)

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SI2305DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

0.044 Ω

Polarity

P-Channel

Power Dissipation

1.25 W

Drain to Source Voltage (Vds)

8 V

Breakdown Voltage (Gate to Source)

±8.00 V

Continuous Drain Current (Ids)

3.50 A

Input Capacitance (Ciss)

1245pF @4V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.25W (Ta)

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SI2305DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃

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SI2305DS-T1-E3 Environmental

SI2305DS-T1-E3 Function Overview

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