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Part Datasheet Search > MOSFETs > VISHAY > SI2305DS-T1-E3 Datasheet PDF
SI2305DS-T1-E3
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SI2305DS-T1-E3 Datasheet PDF (5 Pages)
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SI2305DS-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Rating
1.25 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
52 mΩ
Polarity
P-CH
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
8 V
Continuous Drain Current (Ids)
3.5A
Rise Time
25 ns
Input Capacitance (Ciss)
1245pF @4V(Vds)
Input Power (Max)
1.25 W
Fall Time
19 ns
Operating Temperature (Max)
150 ℃

SI2305DS-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI2305DS-T1-E3 Documents

VISHAY
5 Pages / 0.07 MByte
VISHAY
10 Pages / 0.19 MByte
VISHAY
2 Pages / 0.18 MByte

SI2305DST1 Documents

VISHAY
SOT-23P-CH 8V 3.5A
VISHAY
SOT-23P-CH 8V 3.5A
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.044Ω; ID +/-3.5A; TO-236 (SOT-23); PD 1.25W
Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.044Ω; ID +/-3.5A; TO-236 (SOT-23); PD 1.25W
Vishay Siliconix
MOSFET 8V 3.5A 1.25W 52mohm @ 4.5V
VISHAY
SOT-23P-CH 8V 3.5A
Vishay Semiconductor
Trans MOSFET P-CH Si 8V 3.5A 3Pin SOT-23 T/R
Vishay Intertechnology
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