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SI4431BDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8P-CH 30V 5.7A 30mΩ

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Documentation:

SI4431BDY-T1-GE3 Datasheet (6 Pages)

Part Numbering System on1 Page

SI4431BDY-T1-GE3 Application Note (4 Pages)

SI4431BDY-T1-GE3 Datasheet PDF (6 Pages)

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SI4431BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

23 mΩ

Polarity

P-CH

Power Dissipation

1.5 W

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

5.7A

Rise Time

10 ns

Fall Time

47 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2500 mW

View Datasheet >

SI4431BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃

Minimum Packing Quantity

2500

View Datasheet >

SI4431BDY-T1-GE3 Environmental

SI4431BDY-T1-GE3 Documents

SI4431BDY-T1-GE3 Datasheet

VISHAY

6 Pages / 0.09 MByte

SI4431BDY-T1-GE3 Other Datasheet PDF

VISHAY

9 Pages / 0.19 MByte

SI4431BDY-T1-GE3 Application Note

VISHAY

4 Pages / 0.05 MByte

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