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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4431BDY-T1-GE3 Datasheet PDF
SI4431BDY-T1-GE3
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SI4431BDY-T1-GE3 Datasheet PDF (9 Pages)
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SI4431BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Polarity
P-Channel
Power Dissipation
1.5W (Ta)
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
-5.70 A
Power Dissipation (Max)
1.5W (Ta)

SI4431BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4431BDY-T1-GE3 Documents

Vishay Siliconix
9 Pages / 0.15 MByte
Vishay Siliconix
9 Pages / 0.22 MByte

SI4431BDYT1 Documents

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MOSFET 30V 7.5A 1.5W
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SOIC-8P-CH 30V 5.7A 30mΩ
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Trans MOSFET P-CH 30V 5.7A 8Pin SOIC N T/R
VISHAY
SOIC-8P-CH 30V 5.7A 30mΩ
Vishay Siliconix
MOSFET P-CH 30V 5.7A 8-SOIC
Vishay Semiconductor
MOSFET 30V 7.5A 2.5W 30mohm @ 10V
Vishay Siliconix
Trans MOSFET P-CH 30V 5.7A 8Pin SOIC N T/R
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Vishay Intertechnology
Vishay Siliconix
P-CHANNEL 30V (D-S) MOSFET
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