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SI4431CDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R

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3D Model

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Documentation:

SI4431CDY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page 9 Page

Part Numbering System on1 Page

SI4431CDY-T1-GE3 Datasheet PDF (10 Pages)

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SI4431CDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.026 Ω

Polarity

P-Channel

Power Dissipation

4.2 W

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

-9.00 A

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

4.2 W

View Datasheet >

SI4431CDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4431CDY-T1-GE3 Environmental

SI4431CDY-T1-GE3 Export Classifications

SI4431CDY-T1-GE3 Function Overview

SI4431CDY-T1-GE3 Documents

SI4431CDY-T1-GE3 Datasheet

Vishay Semiconductor

10 Pages / 0.26 MByte

SI4431CDY-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

10 Pages / 0.24 MByte

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SI4431CDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8P-CH 30V 7A 32mΩ

SI4431CDY-T1-GE3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R

SI4431CDY-T1-E3 Datasheet PDF

VISHAY

SOIC-8P-CH 30V 7A 32mΩ

SI4431CDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R

SI4431CDY-T1-E3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 30V 7A 8Pin SOIC N T/R

SI4431CDY-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET 30V 9A 4.2W 32mohm @ 10V

SI4431CDY-T1-GE3 Datasheet PDF

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SI4431CDY-T1-E3 Datasheet PDF

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