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Part Datasheet Search > MOSFETs > ST Microelectronics > STP8NK80Z Datasheet PDF
STP8NK80Z
$ 1.155
STP8NK80Z Datasheet PDF (15 Pages)
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STP8NK80Z Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
800 V
Current Rating
6.20 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
1.50 Ω
Polarity
N-Channel
Power Dissipation
140 W
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
6.20 A
Rise Time
30 ns
Input Capacitance (Ciss)
1320pF @25V(Vds)
Input Power (Max)
140 W
Fall Time
28 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
140W (Tc)

STP8NK80Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STP8NK80Z Documents

ST Microelectronics
15 Pages / 0.4 MByte

STP8NK80 Documents

ST Microelectronics
TO-220FP N-CH 800V 6.2A
ST Microelectronics
N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 800V \- 1.3Ω \- 6.2A \- TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET
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