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Part Datasheet Search > BJTs > Infineon > BFP650H6327XTSA1 Datasheet PDF
BFP650H6327XTSA1
$ 0.171
BFP650H6327XTSA1 Datasheet PDF (29 Pages)
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BFP650H6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-343-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
500 mW
Input Capacitance
1.3 pF
Breakdown Voltage (Collector to Emitter)
4.5 V
Gain
10.5dB ~ 21.5dB
hFE Min
110 @80mA, 3V
Input Power (Max)
500 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

BFP650H6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
150℃ (TJ)

BFP650H6327XTSA1 Documents

Infineon
29 Pages / 1.47 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
30 Pages / 1.1 MByte
Infineon
21 Pages / 0.73 MByte
Infineon
1 Pages / 0.13 MByte

BFP650H6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 13V; 150mA; 0.5W(1/2W); SOT343
Infineon
Bipolar - RF Transistor, NPN, 4.5V, 42GHz, 0.5W(1/2W), 150mA, 100
Trans
TRANS RF NPN 4V 150mA SOT343
Infineon
Trans RF BJT NPN 4V 0.15A 0.5W(1/2W) Automotive 4Pin(3+Tab) SOT-343 T/R
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