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IRF7832PBF
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IRF7832PBF Datasheet PDF (10 Pages)
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IRF7832PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
30.0 V
Current Rating
20.0 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
4.8 mΩ
Polarity
N-Channel
Power Dissipation
2.5 W
Part Family
IRF7832
Input Capacitance
4310pF @15V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
20.0 A
Rise Time
12.3 ns
Input Capacitance (Ciss)
4310pF @15V(Vds)
Input Power (Max)
2.5 W
Operating Temperature (Max)
155 ℃
Operating Temperature (Min)
-55 ℃

IRF7832PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
5 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 155℃

IRF7832PBF Documents

International Rectifier
10 Pages / 0.25 MByte

IRF7832 Documents

International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 30V 20A
Infineon
SOIC N-CH 30V 20A
International Rectifier
Trans MOSFET N-CH 30V 20A 8Pin SOIC T/R
Infineon
SOIC N-CH 30V 20A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 3.1Milliohms; ID 20A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
MOSFET N-CH 30V 20A 8-SOIC
International Rectifier
Infineon
SOIC N-CH 30V 20A
International Rectifier
SOP-8
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