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Part Datasheet Search > MOSFETs > Infineon > IRF7832Z Datasheet PDF
IRF7832Z
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IRF7832Z Datasheet PDF (10 Pages)
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IRF7832Z Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOIC-8
Polarity
N-CH
Power Dissipation
2.5W (Ta)
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
21A
Input Capacitance (Ciss)
3860pF @15V(Vds)
Power Dissipation (Max)
2.5W (Ta)

IRF7832Z Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7832Z Documents

Infineon
10 Pages / 0.25 MByte
Infineon
10 Pages / 0.25 MByte

IRF7832 Documents

International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 30V 20A
Infineon
SOIC N-CH 30V 20A
International Rectifier
Trans MOSFET N-CH 30V 20A 8Pin SOIC T/R
Infineon
SOIC N-CH 30V 20A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 3.1Milliohms; ID 20A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
MOSFET N-CH 30V 20A 8-SOIC
International Rectifier
Infineon
SOIC N-CH 30V 20A
International Rectifier
SOP-8
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