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Part Datasheet Search > Transistors > Infineon > IRF7509TR Datasheet PDF
IRF7509TR
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IRF7509TR Datasheet PDF (8 Pages)
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IRF7509TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Current Rating
2.70 A
Case/Package
TSSOP-8
Drain to Source Resistance (on) (Rds)
170 mΩ
Polarity
Dual N-Channel, Dual P-Channel
Power Dissipation
1.25 W
Part Family
IRF7509
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
2.00 A
Rise Time
12.0 ns
Input Capacitance (Ciss)
210pF @25V(Vds)
Input Power (Max)
1.25 W

IRF7509TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7509TR Documents

Infineon
8 Pages / 0.21 MByte
Infineon
11 Pages / 0.21 MByte

IRF7509 Documents

International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N+P 30V 2.7A/2A
IRF
Power MOSFET(Vdss=+-30V)
Infineon
Micro N+P 30V 2.7A/2A
International Rectifier
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro T/R
Infineon
Micro N+P 30V 2.7A/2A
International Rectifier
Trans MOSFET N/P-CH 30V 2.7A/2A 8Pin Micro
International Rectifier
MOSFET N+P 30V 2A MICRO8
Infineon
Micro N+P 30V 2.7A/2A
Infineon
30V 1N-1P Channel HEXFET Power MOSFET in a Micro-8 package
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