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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFBE30PBF Datasheet PDF
IRFBE30PBF
$ 0.965
IRFBE30PBF Datasheet PDF (9 Pages)
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IRFBE30PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
125W (Tc)
Drain to Source Voltage (Vds)
800 V
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
125 W
Power Dissipation (Max)
125W (Tc)

IRFBE30PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFBE30PBF Documents

Vishay Siliconix
9 Pages / 1.55 MByte
Vishay Siliconix
9 Pages / 1.55 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFBE30 Documents

International Rectifier
MOSFET N-CH 800V 4.1A TO-220AB
VISHAY
TO-220AB N-CH 800V 4.1A
Vishay Siliconix
MOSFET N-CH 800V 4.1A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=800V, Rds(on)=3Ω, Id=4.1A)
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(2+Tab) D2PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3Ω; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
International Rectifier
Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-262
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