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IRFBE30S
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IRFBE30S Datasheet PDF (6 Pages)
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IRFBE30S Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
800 V
Current Rating
4.10 A
Case/Package
TO-262
Polarity
N-Channel
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
4.10 A
Rise Time
33.0 ns

IRFBE30S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk

IRFBE30S Documents

International Rectifier
6 Pages / 0.45 MByte
International Rectifier
6 Pages / 0.46 MByte

IRFBE30 Documents

International Rectifier
MOSFET N-CH 800V 4.1A TO-220AB
VISHAY
TO-220AB N-CH 800V 4.1A
Vishay Siliconix
MOSFET N-CH 800V 4.1A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=800V, Rds(on)=3Ω, Id=4.1A)
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(2+Tab) D2PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3Ω; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
International Rectifier
Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab
VISHAY
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-262
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