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IRFBE30SPBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

D2PAK-263

Description:

VISHAY IRFBE30SPBF Power MOSFET, N Channel, 4.1A, 800V, 3Ω, 10V, 4V

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Documentation:

IRFBE30SPBF Datasheet (8 Pages)

Part Numbering System on1 Page

IRFBE30SPBF Datasheet PDF (8 Pages)

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IRFBE30SPBF Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

D2PAK-263

Drain to Source Resistance (on) (Rds)

3 Ω

Polarity

N-Channel

Power Dissipation

125 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

800 V

Continuous Drain Current (Ids)

4.10 A

Operating Temperature (Max)

150 ℃

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IRFBE30SPBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

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IRFBE30SPBF Environmental

IRFBE30SPBF Function Overview

IRFBE30SPBF Documents

IRFBE30SPBF Datasheet

Vishay Semiconductor

8 Pages / 1.16 MByte

IRFBE30SPBF Other Datasheet PDF

Vishay Semiconductor

11 Pages / 0.49 MByte

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