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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFK170N10 Datasheet PDF
IXFK170N10
$ 23.001
IXFK170N10 Datasheet PDF (4 Pages)
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IXFK170N10 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-264-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
10 mΩ
Polarity
N-CH
Power Dissipation
560 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
170A
Rise Time
90 ns
Input Capacitance (Ciss)
10300pF @25V(Vds)
Fall Time
79 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
560W (Tc)

IXFK170N10 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
19.96 mm
Size-Width
5.13 mm
Size-Height
26.16 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFK170N10 Documents

IXYS Semiconductor
4 Pages / 0.14 MByte

IXFK170 Documents

IXYS Semiconductor
TO-264 N-CH 200V 170A
IXYS Semiconductor
Trans MOSFET N-CH 100V 170A 3Pin(3+Tab) TO-264AA
IXYS Semiconductor
TO-264 N-CH 200V 170A
IXYS Semiconductor
TO-264AA N-CH 100V 170A
Littelfuse
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-264AA
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