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IXFX230N20T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

N Channel 200V 230A 7.5mΩ Through Hole GigaMOS Power Mosfet - PLUS-247

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Documentation:

IXFX230N20T Datasheet (5 Pages)

IXFX230N20T Datasheet PDF (5 Pages)

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IXFX230N20T Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

7.5 mΩ

Power Dissipation

1670 W

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Rise Time

35 ns

Input Capacitance (Ciss)

28000pF @25V(Vds)

Fall Time

29 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

1670W (Tc)

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IXFX230N20T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

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IXFX230N20T Environmental

IXFX230N20T Function Overview

IXFX230N20T Documents

IXFX230N20T Datasheet

IXYS Semiconductor

5 Pages / 0.14 MByte

IXFX230N20T Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.16 MByte

IXFX230N20 Documents

IXFX230N20T Datasheet PDF

IXYS Semiconductor

N Channel 200V 230A 7.5mΩ Through Hole GigaMOS Power Mosfet - PLUS-247

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