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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN34N80 Datasheet PDF
IXFN34N80
$ 31.359
IXFN34N80 Datasheet PDF (4 Pages)
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IXFN34N80 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
240 mΩ
Polarity
N-CH
Power Dissipation
600 W
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
34A
Rise Time
45 ns
Input Capacitance (Ciss)
7500pF @25V(Vds)
Input Power (Max)
600 W
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
600W (Tc)

IXFN34N80 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN34N80 Documents

IXYS Semiconductor
4 Pages / 0.13 MByte
IXYS Semiconductor
4 Pages / 0.12 MByte

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