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IXTN200N10L2 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

IXTN200 Series 100V 11mOhm 540NC 830W N-Channel Power MOSFET - SOT-227

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Documentation:

IXTN200N10L2 Datasheet (5 Pages)

IXTN200N10L2 Datasheet PDF (5 Pages)

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IXTN200N10L2 Specifications

TYPE

DESCRIPTION

Number of Pins

4 Pin

Case/Package

SOT-227-4

Power Dissipation

830 W

Drain to Source Voltage (Vds)

100 V

Rise Time

225 ns

Input Capacitance (Ciss)

23000pF @25V(Vds)

Fall Time

27 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

830W (Tc)

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IXTN200N10L2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTN200N10L2 Environmental

IXTN200N10L2 Function Overview

IXTN200N10L2 Documents

IXTN200N10L2 Datasheet

IXYS Semiconductor

5 Pages / 0.16 MByte

IXTN200N10 Documents

IXTN200N10L2 Datasheet PDF

IXYS Semiconductor

IXTN200 Series 100V 11mOhm 540NC 830W N-Channel Power MOSFET - SOT-227

IXTN200N10T Datasheet PDF

IXYS Semiconductor

MOSFET N-CH 100V 200A SOT-227

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