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IXFN230N20T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 200V 220A

Pictures:

3D Model

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Documentation:

IXFN230N20T Datasheet (6 Pages)

IXFN230N20T Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

4 Pin

Case/Package

SOT-227-4

Number of Channels

1 Channel

Polarity

N-CH

Power Dissipation

1090 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

200 V

Continuous Drain Current (Ids)

220A

Rise Time

35 ns

Input Capacitance (Ciss)

28000pF @25V(Vds)

Input Power (Max)

1090 W

Fall Time

29 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1090W (Tc)

View Datasheet >

IXFN230N20T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Width

25.42 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IXFN230N20T Environmental

IXFN230N20T Function Overview

IXFN230N20T Documents

IXFN230N20T Datasheet

IXYS Semiconductor

6 Pages / 0.11 MByte

IXFN230N20T Other Datasheet PDF

IXYS Semiconductor

8 Pages / 0.83 MByte

IXFN230N20 Documents

IXFN230N20T Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 200V 220A

IXFN230N20T Datasheet PDF

Littelfuse

Power Field-Effect Transistor,

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