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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN32N120P Datasheet PDF
IXFN32N120P
$ 66.822
IXFN32N120P Datasheet PDF (5 Pages)
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IXFN32N120P Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Polarity
N-CH
Power Dissipation
830 W
Threshold Voltage
6.5 V
Drain to Source Voltage (Vds)
1200 V
Continuous Drain Current (Ids)
32A
Rise Time
62 ns
Input Capacitance (Ciss)
21000pF @25V(Vds)
Fall Time
48 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000W (Tc)

IXFN32N120P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN32N120P Documents

IXYS Semiconductor
5 Pages / 0.11 MByte
IXYS Semiconductor
5 Pages / 0.11 MByte

IXFN32N120 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN32N120 Power MOSFET, N Channel, 32A, 1.2kV, 350mohm, 10V, 5V
IXYS Semiconductor
SOT-227B N-CH 1200V 32A
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