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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH500N04T2 Datasheet PDF
IXTH500N04T2
$ 9.627
IXTH500N04T2 Datasheet PDF (6 Pages)
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IXTH500N04T2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
1.6 mΩ
Power Dissipation
1000 W
Threshold Voltage
3.5 V
Drain to Source Voltage (Vds)
40 V
Breakdown Voltage (Drain to Source)
40 V
Rise Time
16 ns
Input Capacitance (Ciss)
25000pF @25V(Vds)
Fall Time
44 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000W (Tc)

IXTH500N04T2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTH500N04T2 Documents

IXYS Semiconductor
6 Pages / 0.19 MByte
IXYS Semiconductor
6 Pages / 0.18 MByte

IXTH500N04 Documents

IXYS Semiconductor
Trans MOSFET N-CH 40V 500A 3Pin(3+Tab) TO-247
Littelfuse
Power Field-Effect Transistor,
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