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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX120N20 Datasheet PDF
IXFX120N20
$ 15.385

IXFX120N20 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
120 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
17 mΩ
Polarity
N-CH
Power Dissipation
560 W
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
120 A
Rise Time
65 ns
Input Capacitance (Ciss)
9100pF @25V(Vds)
Fall Time
35 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
560W (Tc)

IXFX120N20 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX120N20 Documents

IXYS Semiconductor
4 Pages / 1.88 MByte
IXYS Semiconductor
4 Pages / 0.07 MByte

IXFX120 Documents

IXYS Semiconductor
PLUS N-CH 200V 120A
IXYS Semiconductor
Trans MOSFET N-CH 250V 120A 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
PLUS N-CH 300V 120A
IXYS Semiconductor
PLUS N-CH 250V 120A
IXYS Semiconductor
PLUS N-CH 300V 120A
IXYS Semiconductor
PLUS N-CH 650V 120A
Littelfuse
Power Field-Effect Transistor,
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